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Nano Lett. 2012 Nov 14;12(11):5495-9. doi: 10.1021/nl301997r. Epub 2012 Nov 1.

Hot phonon dynamics in graphene.

Author information

1
The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA. swwu@fudan.edu.cn

Abstract

The dynamics of hot phonons in supported, suspended, and gated monolayer graphene was studied by using time-resolved anti-Stokes Raman spectroscopy. We found that the hot phonon relaxation is dominated by phonon-phonon interaction in graphene, and strongly affected by the interaction between graphene and the substrate. Relaxation via carrier-phonon coupling, known as Landau damping, is ineffective for hot phonons which are in thermal equilibrium with excited carriers. Our findings provide a basis for better management of energy dissipation in graphene devices.

PMID:
23106146
DOI:
10.1021/nl301997r

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