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Nanotechnology. 2012 Nov 23;23(46):465708. doi: 10.1088/0957-4484/23/46/465708. Epub 2012 Oct 23.

Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift.

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1
Dipartimento di Fisica E Amaldi, Università di Roma Tre, via Vasca Navale 84, I-00146 Roma, Italy.

Abstract

In this paper we present a detailed study of the intersubband absorption occurring between electron states confined in strained Ge multi-quantum wells as a function of the temperature. The high structural quality of the samples is reflected by the very narrow absorption line-shape constant with temperature. We observe a temperature driven charge transfer occurring between the ground and the first excited subband which, in turn, induces a change in the depolarization shift and consequently in the energy of the absorbance peak. The experimental observations are well accounted for by a multi-valley k·p model.

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