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Opt Express. 2012 Sep 24;20(20):22224-32. doi: 10.1364/OE.20.022224.

High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide.

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1
Kotura Inc, 2630 Corporate Place, Monterey Park, CA 91754, USA. dfeng@kotura.com

Abstract

We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm(2), an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy efficient modulator is a key building block for optical interconnection applications.

PMID:
23037370
[Indexed for MEDLINE]
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