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Phys Rev Lett. 2012 Sep 14;109(11):116804. Epub 2012 Sep 12.

Thickness-independent transport channels in topological insulator Bi(2)Se(3) thin films.

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Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, 94 Brett Road, Piscataway, New Jersey 08854, USA.


With high quality topological insulator Bi(2)Se(3) thin films, we report thickness-independent transport properties over wide thickness ranges. Conductance remained nominally constant as the sample thickness changed from 256 to ∼8  QL (where QL refers to quintuple layer, 1  QL≈1  nm). Two surface channels of very different behaviors were identified. The sheet carrier density of one channel remained constant at ∼3.0×10(13)  cm(-2) down to 2 QL, while the other, which exhibited quantum oscillations, remained constant at ∼8×10(12)  cm(-2) only down to ∼8  QL. The weak antilocalization parameters also exhibited similar thickness independence. These two channels are most consistent with the topological surface states and the surface accumulation layers, respectively.

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