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Phys Rev Lett. 2012 Jun 29;108(26):266806. Epub 2012 Jun 29.

Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

Author information

1
Institute for Superconducting and Electronic Materials, Faculty of Engineering, Australian Institute for Innovative Materials, University of Wollongong, NSW 2522, Australia. xiaolin@uow.edu.au

Abstract

Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

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