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Nanotechnology. 2012 Oct 12;23(40):405601. Epub 2012 Sep 14.

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability.

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  • 1Clermont Université, Université Blaise Pascal, Institut Pascal, BP 10448, F-63000 Clermont-Ferrand, France.


The hydride vapor phase epitaxy (HVPE) process exhibits unexpected properties when growing GaN semiconductor nanowires (NWs). With respect to the classical well-known methods such as metal organic vapor phase epitaxy and molecular beam epitaxy, this near-equilibrium process based on hot wall reactor technology enables the synthesis of nanowires with a constant cylinder shape over unusual length. Catalyst-assisted HVPE shows a record short time process (less than 20 min) coupled to very low precursor consumption. NWs are grown at a fast solidification rate (50 μm h(-1)), facilitated by the high decomposition frequency of the chloride molecules involved in the HVPE process as element III precursors. In this work growth temperature and V/III ratio were investigated to determine the growth mechanism which led to such long NWs. Analysis based on the Ni-Ga phase diagram and the growth kinetics of near-equilibrium HVPE is proposed.

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