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J Nanosci Nanotechnol. 2012 Jul;12(7):5747-53.

Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

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1
Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.

Abstract

A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

PMID:
22966647
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