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Nanotechnology. 2012 Sep 28;23(38):385601. doi: 10.1088/0957-4484/23/38/385601. Epub 2012 Sep 4.

Site-specific and patterned growth of TiO2 nanotube arrays from e-beam evaporated thin titanium film on Si wafer.

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Electrical and Computer Engineering Department, University of Utah, Salt Lake City, UT 84112, USA.


Growth of TiO(2) nanotubes on thin Ti film deposited on Si wafers with site-specific and patterned growth using a photolithography technique is demonstrated for the first time. Ti films were deposited via e-beam evaporation to a thickness of 350-1000 nm. The use of a fluorinated organic electrolyte at room temperature produced the growth of nanotubes with varying applied voltages of 10-60 V (DC) which remained stable after annealing at 500 °C. It was found that variation of the thickness of the deposited Ti film could be used to control the length of the nanotubes regardless of longer anodization time/voltage. Growth of the nanotubes on a SiO(2) barrier layer over a Si wafer, along with site-specific and patterned growth, enables potential application of TiO(2) nanotubes in NEMS/MEMS-type devices.

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