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Nano Lett. 2012 Sep 12;12(9):4449-54. doi: 10.1021/nl3011726. Epub 2012 Aug 20.

Effective cleaning of hexagonal boron nitride for graphene devices.

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Department of Applied Physics, McCullough Building, Stanford University, Stanford, California 94305-4045, United States.

Erratum in

  • Nano Lett. 2013 May 8;13(5):2314.


Hexagonal boron nitride (h-BN) films have attracted considerable interest as substrates for graphene. ( Dean, C. R. et al. Nat. Nanotechnol. 2010 , 5 , 722 - 6 ; Wang, H. et al. Electron Device Lett. 2011 , 32 , 1209 - 1211 ; Sanchez-Yamagishi, J. et al. Phys. Rev. Lett. 2012 , 108 , 1 - 5 .) We study the presence of organic contaminants introduced by standard lithography and substrate transfer processing on h-BN films exfoliated on silicon oxide substrates. Exposure to photoresist processing adds a large broad luminescence peak to the Raman spectrum of the h-BN flake. This signal persists through typical furnace annealing recipes (Ar/H(2)). A recipe that successfully removes organic contaminants and results in clean h-BN flakes involves treatment in Ar/O(2) at 500 °C.

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