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J Nanosci Nanotechnol. 2012 May;12(5):3954-8.

Formation mechanism and characterization of black silicon surface by a single-step wet-chemical process.

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Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.


We report a simple single-step etching method for formation of black surface on silicon wafer by using HAuCl4-HF-H2O2 etching solution, in which catalytic Au particles were deposited in situ. The black surface suppresses the reflectivity in a wide spectral region. The formation mechanism involved has been discussed.


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