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Nano Lett. 2012 Aug 8;12(8):4013-7. doi: 10.1021/nl301335q. Epub 2012 Jul 18.

Highly flexible MoS2 thin-film transistors with ion gel dielectrics.

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1
Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan.

Abstract

Molybdenum disulfide (MoS(2)) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm(2)/(V·s)) and a high on/off current ratio (10(5)). Furthermore, the MoS(2) transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS(2) films make them suitable for use in large-area flexible electronics.

PMID:
22799885
DOI:
10.1021/nl301335q

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