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ACS Nano. 2012 Jul 24;6(7):6378-85. doi: 10.1021/nn301940k. Epub 2012 Jun 21.

Toward the controlled synthesis of hexagonal boron nitride films.

Author information

  • 1Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712, United States. aismach@austin.utexas.edu

Abstract

Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method, and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy.

PMID:
22702240
DOI:
10.1021/nn301940k
[PubMed]
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