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Nano Lett. 2012 Jul 11;12(7):3695-700. doi: 10.1021/nl301485q. Epub 2012 Jun 13.

MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap.

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Institute of Physics and Applied Physics and §School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.


We report on the fabrication of top-gate phototransistors based on a few-layered MoS(2) nanosheet with a transparent gate electrode. Our devices with triple MoS(2) layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS(2) layers. The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS(2) has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS(2) reduce to 1.65 and 1.35 eV, respectively.


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