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Adv Mater. 2012 Jul 10;24(26):3549-54. doi: 10.1002/adma.201201361. Epub 2012 Jun 8.

GaS and GaSe ultrathin layer transistors.

Author information

1
Department of Materials Science and Engineering, International Institute of Nanotechnology, Northwestern University, Evanston, IL 60208, USA.

Abstract

Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.

PMID:
22678832
DOI:
10.1002/adma.201201361
[Indexed for MEDLINE]

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