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ACS Nano. 2012 Jul 24;6(7):5988-94. doi: 10.1021/nn300889c. Epub 2012 Jun 7.

Synthesis of few-layer GaSe nanosheets for high performance photodetectors.

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Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Ministry of Education, No 2 YiKuang Street, Harbin 150080, PR China.


Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO(2)/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW(-1) and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.


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