Send to

Choose Destination
Nanotechnology. 2012 Apr 27;23(16):165202. doi: 10.1088/0957-4484/23/16/165202. Epub 2012 Apr 2.

The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties.

Author information

Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland.


III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed in an effort to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two-layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows us to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response.

[Indexed for MEDLINE]

Supplemental Content

Full text links

Icon for IOP Publishing Ltd.
Loading ...
Support Center