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Sensors (Basel). 2012;12(2):1280-7. doi: 10.3390/s120201280. Epub 2012 Jan 31.

Enhanced responsivity of photodetectors realized via impact ionization.

Author information

1
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China. yuji4268@163.com

Abstract

To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.

KEYWORDS:

impact ionization; photodetector; responsivity

PMID:
22438709
PMCID:
PMC3304111
DOI:
10.3390/s120201280
[Indexed for MEDLINE]
Free PMC Article

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