Format

Send to

Choose Destination
Nano Lett. 2012 Apr 11;12(4):1839-44. doi: 10.1021/nl2041222. Epub 2012 Mar 23.

Enhanced carrier transport along edges of graphene devices.

Author information

1
Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.

Abstract

The relation between macroscopic charge transport properties and microscopic carrier distribution is one of the central issues in the physics and future applications of graphene devices (GDs). We find strong conductance enhancement at the edges of GDs using scanning gate microscopy. This result is explained by our theoretical model of the opening of an additional conduction channel localized at the edges by depleting accumulated charge by the tip.

PMID:
22429202
DOI:
10.1021/nl2041222

Supplemental Content

Full text links

Icon for American Chemical Society
Loading ...
Support Center