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Opt Express. 2012 Feb 13;20(4):4085-101. doi: 10.1364/OE.20.004085.

Ultrafast nonlinear optical studies of silicon nanowaveguides.

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Research Laboratory of Electronics, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.


Results of a self-consistent ultrafast study of nonlinear optical properties of silicon nanowaveguides using heterodyne pump-probe technique are reported. The two-photon absorption coefficient and free-carrier absorption effective cross-section were determined to be 0.68cm/GW, and 1.9x10(-17) cm2, respectively and the Kerr coefficient and free-carrier-induced refractive index change 0.32x10(-13) cm2/W, and -5.5x10(-21) cm3, respectively. The effects of the proton bombardment on the linear loss and the carrier lifetime of the devices were also studied. Carrier lifetime reduction from 330ps to 33ps with a linear loss of only 14.8dB/cm was achieved using a proton bombardment level of 10(15)/cm2.


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