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J Nanosci Nanotechnol. 2011 Dec;11(12):11206-10.

A comprehensive model of electrical noise in AlGaAs/GaAs long-wavelength quantum well infrared photodetectors.

Author information

1
Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China.

Abstract

We present the results of a comprehensive model for the electric noise simulation of a kind of nano-optoelectronics device: AIGaAs/GaAs long-wavelength quantum well infrared photodetectors (LW-QWIPs) in dark conditions by assuming a three-dimensional carrier transport in the barriers where the electrical field are obtained in a self-consistent way. This model takes into account all the fundamental mechanisms involved in the device detection process. The electrical field distribution, dark currents, electrical noise are carefully calculated and analyzed. The numerical results also explain well our experimental observations.

PMID:
22409086
DOI:
10.1166/jnn.2011.4078

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