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Nanoscale Res Lett. 2012 Feb 22;7:150. doi: 10.1186/1556-276X-7-150.

Nanoscale anisotropic plastic deformation in single crystal GaN.

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Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou, 215123, People's Republic of China.


Elasto-plastic mechanical deformation behaviors of c-plane (0001) and nonpolar GaN single crystals are studied using nanoindentation, cathodoluminescence, and transmission electron microscopy. Nanoindentation tests show that c-plane GaN is less susceptible to plastic deformation and has higher hardness and Young's modulus than the nonpolar GaN. Cathodoluminescence and transmission electron microscopy characterizations of indent-induced plastic deformation reveal that there are two primary slip systems for the c-plane GaN, while there is only one most favorable slip system for the nonplane GaN. We suggest that the anisotropic elasto-plastic mechanical properties of GaN are relative to its anisotropic plastic deformation behavior.PACS: 62.20.fq; 81.05.Ea; 61.72.Lk.

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