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Opt Express. 2012 Jan 30;20(3):3209-18. doi: 10.1364/OE.20.003209.

Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration.

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State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.


We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator, which is compatible with CMOS fabrication process and works well at a low driving voltage. This is achieved by the optimization of the coplanar waveguide electrode to reduce the electrical signal transmission loss. At the same time, the velocity and impedance matching are both considered. The 12.5 Gbit/s data transmission experiment of the fabricated device with a 2-mm-long phase shifter is performed. The driving voltages with the swing amplitudes of 1 V and 2 V and the reverse bias voltages of 0.5 V and 0.8 V are applied to the device, respectively. The corresponding extinction ratios are 7.67 and 12.79 dB.

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