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J Am Chem Soc. 2012 Feb 29;134(8):3804-9. doi: 10.1021/ja210211z. Epub 2012 Feb 17.

Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes.

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1
Department of Molecular Science and Technology, Ajou University, Suwon 443-749, Korea.

Abstract

Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K.

PMID:
22303916
DOI:
10.1021/ja210211z
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