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Nano Lett. 2012 Mar 14;12(3):1136-40. doi: 10.1021/nl2021575. Epub 2012 Feb 10.

Ambipolar MoS2 thin flake transistors.

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Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656, Japan.


Field effect transistors (FETs) made of thin flake single crystals isolated from layered materials have attracted growing interest since the success of graphene. Here, we report the fabrication of an electric double layer transistor (EDLT, a FET gated by ionic liquids) using a thin flake of MoS(2), a member of the transition metal dichalcogenides, an archetypal layered material. The EDLT of the thin flake MoS(2) unambiguously displayed ambipolar operation, in contrast to its commonly known bulk property as an n-type semiconductor. High-performance transistor operation characterized by a large "ON" state conductivity in the order of ~mS and a high on/off ratio >10(2) was realized for both hole and electron transport. Hall effect measurements revealed mobility of 44 and 86 cm(2) V(-1) s(-1) for electron and hole, respectively. The hole mobility is twice the value of the electron mobility, and the density of accumulated carrier reached 1 × 10(14) cm(-2), which is 1 order of magnitude larger than conventional FETs with solid dielectrics. The high-density carriers of both holes and electrons can create metallic transport in the MoS(2) channel. The present result is not only important for device applications with new functionalities, but the method itself would also act as a protocol to study this class of material for a broader scope of possibilities in accessing their unexplored properties.

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