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Opt Express. 2011 Dec 19;19(27):25866-72. doi: 10.1364/OE.19.025866.

Strained germanium thin film membrane on silicon substrate for optoelectronics.

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Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.


This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n(+) doping reduces the required injected carrier density for population inversion by over a factor of 60. We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um.

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