High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode

Zhi Li; Yang Fu; Molly Piels; Huapu Pan; Andreas Beling; John E Bowers; Joe C Campbell

doi:10.1364/OE.19.00B385

High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode

Opt Express. 2011 Dec 12;19(26):B385-90. doi: 10.1364/OE.19.00B385.

Authors

Zhi Li¹, Yang Fu, Molly Piels, Huapu Pan, Andreas Beling, John E Bowers, Joe C Campbell

Affiliation

¹ Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA. zl4s@virginia.edu

PMID: 22274046
DOI: 10.1364/OE.19.00B385

Abstract

We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.