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ACS Nano. 2012 Feb 28;6(2):1109-15. doi: 10.1021/nn203516z. Epub 2012 Jan 24.

Variability in carbon nanotube transistors: improving device-to-device consistency.

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IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States.


The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves highly effective and robust at improving device-to-device consistency-hysteresis and threshold voltage variation are reduced by an average of 84 and 53%, respectively. The effect of gate and drain-source bias on hysteresis is considered, showing strong dependence that must be accounted for when analyzing the effectiveness of a passivation layer. These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle.


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