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Nano Lett. 2012 Feb 8;12(2):758-62. doi: 10.1021/nl203701g. Epub 2012 Jan 18.

Sub-10 nm carbon nanotube transistor.

Author information

1
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA. aaronf@us.ibm.com

Abstract

Although carbon nanotube (CNT) transistors have been promoted for years as a replacement for silicon technology, there is limited theoretical work and no experimental reports on how nanotubes will perform at sub-10 nm channel lengths. In this manuscript, we demonstrate the first sub-10 nm CNT transistor, which is shown to outperform the best competing silicon devices with more than four times the diameter-normalized current density (2.41 mA/μm) at a low operating voltage of 0.5 V. The nanotube transistor exhibits an impressively small inverse subthreshold slope of 94 mV/decade-nearly half of the value expected from a previous theoretical study. Numerical simulations show the critical role of the metal-CNT contacts in determining the performance of sub-10 nm channel length transistors, signifying the need for more accurate theoretical modeling of transport between the metal and nanotube. The superior low-voltage performance of the sub-10 nm CNT transistor proves the viability of nanotubes for consideration in future aggressively scaled transistor technologies.

PMID:
22260387
DOI:
10.1021/nl203701g
[Indexed for MEDLINE]

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