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ACS Nano. 2012 Feb 28;6(2):1455-62. doi: 10.1021/nn204296b. Epub 2012 Jan 24.

Hole transport materials with low glass transition temperatures and high solubility for application in solid-state dye-sensitized solar cells.

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Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.


We present the synthesis and device characterization of new hole transport materials (HTMs) for application in solid-state dye-sensitized solar cells (ssDSSCs). In addition to possessing electrical properties well suited for ssDSSCs, these new HTMs have low glass transition temperatures, low melting points, and high solubility, which make them promising candidates for increased pore filling into mesoporous titania films. Using standard device fabrication methods and Z907 as the sensitizing dye, power conversion efficiencies (PCE) of 2.94% in 2-μm-thick cells were achieved, rivaling the PCE obtained by control devices using the state-of-the-art HTM spiro-OMeTAD. In 6-μm-thick cells, the device performance is shown to be higher than that obtained using spiro-OMeTAD, making these new HTMs promising for preparing high-efficiency ssDSSCs.


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