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Nano Lett. 2012 Jan 11;12(1):141-4. doi: 10.1021/nl2031629. Epub 2011 Dec 7.

Doping monolayer graphene with single atom substitutions.

Author information

1
Institute of Applied Mechanics, Zhejiang University, Hangzhou 310027, China.

Abstract

Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope.

PMID:
22136503
DOI:
10.1021/nl2031629
[Indexed for MEDLINE]

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