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Nano Lett. 2012 Jan 11;12(1):113-8. doi: 10.1021/nl203065e. Epub 2011 Dec 21.

Tunable bandgap in silicene and germanene.

Author information

1
State Key Laboratory of Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, PR China.

Abstract

By using ab initio calculations, we predict that a vertical electric field is able to open a band gap in semimetallic single-layer buckled silicene and germanene. The sizes of the band gap in both silicene and germanene increase linearly with the electric field strength. Ab initio quantum transport simulation of a dual-gated silicene field effect transistor confirms that the vertical electric field opens a transport gap, and a significant switching effect by an applied gate voltage is also observed. Therefore, biased single-layer silicene and germanene can work effectively at room temperature as field effect transistors.

PMID:
22050667
DOI:
10.1021/nl203065e
[Indexed for MEDLINE]

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