Format

Send to

Choose Destination
See comment in PubMed Commons below
Nano Lett. 2011 Nov 9;11(11):5008-12. doi: 10.1021/nl2030322. Epub 2011 Oct 21.

Quantum confinement effects in nanoscale-thickness InAs membranes.

Author information

1
Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States.

Abstract

Nanoscale size effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field and thickness dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance toward establishing the fundamental device physics of two-dimensional semiconductors.

PMID:
22007924
DOI:
10.1021/nl2030322
[Indexed for MEDLINE]
PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for American Chemical Society
    Loading ...
    Support Center