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ACS Nano. 2011 Nov 22;5(11):9144-53. doi: 10.1021/nn203377t. Epub 2011 Oct 19.

Toward clean and crackless transfer of graphene.

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National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.


We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device-compatible substrate. On the basis of these results, we have developed a "modified RCA clean" transfer method that has much better control of both contamination and crack formation and does not degrade the quality of the transferred graphene. Using this transfer method, high device yields, up to 97%, with a narrow device performance metrics distribution were achieved. This demonstration addresses an important step toward large-scale graphene-based electronic device applications.


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