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Opt Express. 2011 Oct 10;19(21):20761-72. doi: 10.1364/OE.19.020761.

Energy transfer and enhanced 1.54 μm emission in Erbium-Ytterbium disilicate thin films.

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MATIS-IMM CNR, Via S. Sofia 64, 95123 Catania, Italy.


α-(Yb1-xErx)2Si2O7 thin films on Si substrates were synthesized by magnetron co-sputtering. The optical emission from Er3+ ions has been extensively investigated, evidencing the very efficient role of Yb-Er coupling. The energy-transfer coefficient was evaluated for an extended range of Er content (between 0.2 and 16.5 at.%) reaching a maximum value of 2 × 10⁻¹⁶ cm⁻³s⁻¹. The highest photoluminescence emission at 1535 nm is obtained as a result of the best compromise between the number of Yb donors (16.4 at.%) and Er acceptors (1.6 at.%), for which a high population of the first excited state is reached. These results are very promising for the realization of 1.54 μm optical amplifiers on a Si platform.

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