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Opt Express. 2011 Oct 10;19(21):20172-81. doi: 10.1364/OE.19.020172.

Mid-infrared to telecom-band supercontinuum generation in highly nonlinear silicon-on-insulator wire waveguides.

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Photonics Research Group, Department of Information Technology, Ghent University – imec, Ghent B-9000, Belgium.


We demonstrate the generation of a supercontinuum in a 2 cm long silicon wire by pumping the wire with mid-infrared picosecond pulses in the anomalous dispersion regime. The supercontinuum extends from 1535 nm up to 2525 nm for a coupled peak power of 12.7 W. It is shown that the supercontinuum originates primarily from the amplification of background noise. A detailed analysis of the spectral components which are generated through phase-matched processes is applied to extract the group velocity dispersion and fourth-order dispersion coefficient of the silicon wire waveguide.

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