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Opt Express. 2011 Sep 12;19(19):18319-23. doi: 10.1364/OE.19.018319.

Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.

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Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou, China.


InGaN based light-emitting diodes (LEDs) with undoped GaN interlayer of variant thicknesses grown by metal-organic chemical vapor deposition technique have been investigated. It was found that the thickness of undoped GaN interlayers affected LEDs' performance greatly. The LED with 50 nm undoped GaN interlayer showed higher light output power and lower reverse-leakage current compared with the others at 20 mA. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the improvement of the quality of depletion region by inserting an undoped GaN layer, as well as reduction of the Shockley-Read-Hall recombination in InGaN/GaN MQWs.

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