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Phys Rev Lett. 2011 Aug 5;107(6):066405. Epub 2011 Aug 4.

Room temperature ultralow threshold GaN nanowire polariton laser.

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Center for Nanoscale Photonics and Spintronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 48109, USA.


We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing.

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