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Nano Lett. 2011 Sep 14;11(9):3912-6. doi: 10.1021/nl2020697. Epub 2011 Aug 24.

Nanopatterning of fluorinated graphene by electron beam irradiation.

Author information

1
Centre for Graphene Science, CEMPS, University of Exeter, Exeter, EX4 4QL, U.K.

Abstract

We demonstrate the possibility to selectively reduce insulating fluorinated graphene to conducting and semiconducting graphene by electron beam irradiation. Electron-irradiated fluorinated graphene microstructures show 7 orders of magnitude decrease in resistivity (from 1 TΩ to 100 kΩ), whereas nanostructures show a transport gap in the source-drain bias voltage. In this transport gap, electrons are localized, and charge transport is dominated by variable range hopping. Our findings demonstrate a step forward to all-graphene transparent and flexible electronics.

PMID:
21851114
DOI:
10.1021/nl2020697

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