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Nanotechnology. 2008 Sep 3;19(35):355206. doi: 10.1088/0957-4484/19/35/355206. Epub 2008 Jul 21.

Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure.

Author information

1
Department of Physics, Jiangxi Normal University, Nanchang 330022, Jiangxi, People's Republic of China.

Abstract

A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO(2) shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.

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