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J Nanosci Nanotechnol. 2011 Jun;11(6):5108-13.

Growth mode and defect evaluation of GaSb on GaAs substrate: a transmission electron microscopy study.

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Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, NM 87131, USA.


We use transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) techniques to confirm and analyze the interfacial misfit (IMF) and non-IMF growth modes for GaSb epilayers on GaAs substrates. Under optimized IMF growth conditions, only pure 90 degrees dislocations are generated along both [110] and [1-10] directions and located exactly at the epi-substrate interface, which leads to very low density of misfit dislocations propagating from the GaSb/GaAs interface along the growth direction, compared to the non-IMF growth condition. The mechanism of defect annihilation indicates that this IMF mergence process happens without formation of threading dislocations into the GaSb epilayer, which is a completely relaxed growth mode with extremely low defect density. Based on scanning several sets of wafer surfaces, plan-view TEM confirms that the misfit defect densities are estimated to be approximately 5 x 10(5) cm(-2) for IMF growth mode and approximately 10(9) cm(-2) for non-IMF growth mode.

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