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Opt Express. 2011 Jul 4;19(14):13692-9. doi: 10.1364/OE.19.013692.

Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing.

Author information

1
Department of Electrical Engineering, University of California, Santa Barbara, California 93106, USA. siddharth@ece.ucsb.edu

Abstract

We demonstrate multiple bandgap integration on the hybrid silicon platform using quantum well intermixing. A broadband DFB laser array and a DFB-EAM array are realized on a single chip using four bandgaps defined by ion implantation enhanced disordering. The broadband laser array uses two bandgaps with 17 nm blue shift to compensate for gain roll-off while the integrated DFB-EAMs use the as-grown bandgap for optical gain and a 30 nm blue shifted bandgap for modulation. The multi-channel DFB array includes 13 lasers with >90 nm gain-bandwidth. The transponder includes four DFB-EAMs with 14 dB DC extinction at 4 V bias.

PMID:
21747525
DOI:
10.1364/OE.19.013692
[Indexed for MEDLINE]
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