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Nanotechnology. 2008 Feb 27;19(8):085706. doi: 10.1088/0957-4484/19/8/085706. Epub 2008 Feb 4.

Structure and 1/f noise of boron doped polymorphous silicon films.

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State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China.


The influence of structure variation on the 1/f noise of nanometric boron doped hydrogenated polymorphous silicon (pm-Si:H) films was investigated. The films were grown by the conventional radio frequency plasma enhanced chemical vapor deposition (PECVD) method. Raman spectroscopy was used to reveal the crystalline volume fraction (X(c)) and crystal size of the pm-Si:H. The measurement of optical and structure properties was carried out with spectroscopic ellipsometry (SE) in the Tauc-Lorentz model. A Fourier transform infrared (FTIR) spectrometer was used to characterize the presence of nanostructure-sized silicon clusters in pm-Si:H film deposited on KBr substrate. The electrical properties of the films were measured using evaporated coplanar nickel as the electrode. A semiconductor system was designed to obtain the 1/f noise of pm-Si:H film as well as that of amorphous and microcrystalline silicon films. The results demonstrate that the 1/f noise of pm-Si:H is nearly as low as that of microcrystalline silicon and much lower than that of amorphous silicon. The disorder to order transition mechanism of crystallization was used to analyze the decrease of noise compared with amorphous silicon.

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