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J Phys Condens Matter. 2008 Jul 9;20(27):275222. doi: 10.1088/0953-8984/20/27/275222. Epub 2008 Jun 4.

Transient current in nematic cells containing a silicon substrate.

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1
Physics Department, Belgorod State University, Studencheskaya 14 Street, Belgorod 308007, Russia.

Abstract

Transient currents induced by step voltage or polarity reversal of voltage applied to a liquid crystal cell containing a silicon substrate have been investigated. It is shown that the curves of transient current reveal a minimum for negative polarity of dc voltage relative to a silicon substrate of p-type conductivity. The time of the occurrence of the minimum corresponds to the collection of positive ions from the bulk of the liquid crystal at the silicon surface as a result of drift. This is explained by the formation of a highly resistive layer in the silicon under an electric field of positive ions collected at the silicon surface (a field effect). In polarity reversal experiments, a knowledge of the time of the occurrence of the minimum enables us to estimate the mobility of positive ions, which gives a value of 1.4 × 10(-11) M(2) Bc(-1).

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