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Nano Lett. 2011 Jul 13;11(7):2640-3. doi: 10.1021/nl200631m. Epub 2011 Jun 20.

High on/off ratios in bilayer graphene field effect transistors realized by surface dopants.

Author information

1
Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal-Strasse 25, 52074 Aachen, Germany. szafranek@amo.de

Abstract

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic, and sensor applications. So far the operation of bilayer graphene-based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this paper, we report on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate doping. The adsorbate dopants on the upper side of the graphene establish a displacement field perpendicular to the graphene surface breaking the inversion symmetry of the two graphene layers. Low-temperature measurements indicate that the increased on/off ratio is caused by the opening of a mobility gap.

PMID:
21688768
DOI:
10.1021/nl200631m
[Indexed for MEDLINE]

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