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Nat Mater. 2011 Jun 19;10(7):521-6. doi: 10.1038/nmat3051.

Giant Rashba-type spin splitting in bulk BiTeI.

Author information

1
Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan. ishizaka@ap.t.u-tokyo.ac.jp

Abstract

There has been increasing interest in phenomena emerging from relativistic electrons in a solid, which have a potential impact on spintronics and magnetoelectrics. One example is the Rashba effect, which lifts the electron-spin degeneracy as a consequence of spin-orbit interaction under broken inversion symmetry. A high-energy-scale Rashba spin splitting is highly desirable for enhancing the coupling between electron spins and electricity relevant for spintronic functions. Here we describe the finding of a huge spin-orbit interaction effect in a polar semiconductor composed of heavy elements, BiTeI, where the bulk carriers are ruled by large Rashba-like spin splitting. The band splitting and its spin polarization obtained by spin- and angle-resolved photoemission spectroscopy are well in accord with relativistic first-principles calculations, confirming that the spin splitting is indeed derived from bulk atomic configurations. Together with the feasibility of carrier-doping control, the giant-Rashba semiconductor BiTeI possesses excellent potential for application to various spin-dependent electronic functions.

PMID:
21685900
DOI:
10.1038/nmat3051

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