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J Am Chem Soc. 2011 Jul 6;133(26):9968-71. doi: 10.1021/ja2010576. Epub 2011 Jun 10.

Influence of substrate surface chemistry on the performance of top-gate organic thin-film transistors.

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1
CEA/LITEN/LCI, 17 rue des martyrs, 38054 Grenoble, France. dboudinet@polyera.com

Abstract

Organic thin-film transistor (OTFT) performance depends on the chemical characteristics of the interface between functional semiconductor/dielectric/conductor materials. Here we report for the first time that OTFT response in top-gate architectures strongly depends on the substrate chemical functionalization. Depending on the nature of the substrate surface, dramatic variations and opposite trends of the TFT threshold voltage (~±50 V) and OFF current (10(5)×!) are observed for both p- and n-channel semiconductors. However, the field-effect mobility varies only marginally (~2×). Our results demonstrate that the substrate is not a mere passive mechanical support.

PMID:
21661723
DOI:
10.1021/ja2010576
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