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Nanotechnology. 2011 Jun 24;22(25):254002. doi: 10.1088/0957-4484/22/25/254002. Epub 2011 May 16.

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook.

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1
Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea.

Abstract

This review article summarized the recent understanding of resistance switching (RS) behavior in several binary oxide thin film systems. Among the various RS materials and mechanisms, TiO(2) and NiO thin films in unipolar thermo-chemical switching mode are primarily dealt with. To facilitate the discussions, the RS was divided into three parts; electroforming, set and reset steps. After short discussions on the electrochemistry of 'electrolytic' oxide materials, the general and peculiar aspects of these RS systems and mechanism are elaborated. Although the RS behaviors and characteristics of these materials are primarily dependent on the repeated formation and rupture of the conducting filaments (CFs) at the nanoscale at a localized position, this mechanism appears to offer a basis for the understanding of other RS mechanisms which were originally considered to be irrelevant to the localized events. The electroforming and set switching phenomena were understood as the process of CF formation and rejuvenation, respectively, which are mainly driven by the thermally assisted electromigration and percolation (or even local phase transition) of defects, while the reset process was understood as the process of CF rupture where the thermal energy plays a more crucial role. This review also contains several remarks on the outlook of these resistance change devices as a semiconductor memory.

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