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Opt Express. 2011 Apr 11;19(8):7062-7. doi: 10.1364/OE.19.007062.

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.

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1
Kotura Inc., 2630 Corporate Place, Monterey Park, California 91754, USA. nfeng@kotura.com

Abstract

We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3 µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.0 × 45 µm(2), a total insertion loss of 2.5-5 dB and an extinction ratio of 4-7.5 dB over a wavelength range of 1610-1640 nm with -4V(pp) bias. The estimated Δα/α value is in the range of 2-3.3. The 3 dB bandwidth measurements show that the device is capable of operating at more than 30 GHz. Clear eye-diagram openings at 12.5 Gbps demonstrates large signal modulation at high transmission rate.

PMID:
21503018
[Indexed for MEDLINE]
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