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Opt Express. 2011 Mar 28;19(7):5811-6. doi: 10.1364/OE.19.005811.

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator.

Author information

1
Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA. ytang@ece.ucsb.edu

Abstract

We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.

PMID:
21451605
DOI:
10.1364/OE.19.005811
[Indexed for MEDLINE]
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