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Phys Rev Lett. 2011 Feb 18;106(7):076802. Epub 2011 Feb 18.

Backscattering of Dirac fermions in HgTe quantum wells with a finite gap.

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1
Fakultät für Physik und Astronomie and Röntgen Center for Complex Material Systems, Universität Würzburg, Am Hubland, Germany.

Abstract

The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high-quality HgTe quantum wells exhibit a distinct mobility maximum. We show that this mobility anomaly is due to backscattering of Dirac fermions from random fluctuations of the band gap (Dirac mass). Our findings open new avenues for the study of Dirac fermion transport with finite and random mass, which so far has been hard to access.

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